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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1289 DESCRIPTION *With TO-220 package *Complement to type 2SC3253 *Low saturation voltage *Short switching time APPLICATIONS *Various inductance lamp drivers for electrical equipment *Inverters;converters *Power amplification *Switching regulator ,driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -5 -7 30 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,RBE= IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-2.5A; IB=-0.125A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -60 -80 -5 TYP. 2SA1289 MAX UNIT V V V -0.4 -100 -100 280 V A A MHz hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1289 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1289 4 |
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